收藏本站
NTJS4405N, NVJS4405N
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
25
30
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 20 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = 8.0 V
100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.65
? 2.0
1.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 0.6 A
249
350
m W
V GS = 2.7 V, I D = 0.2 A
V GS = 4.5 V, I D = 1.2 A
299
260
400
Forward Transconductance
g FS
V DS = 5.0 V, I D = 0.5 A
0.5
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
49
60
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
22.4
8.0
30
12
Total Gate Charge
Q G(TOT)
0.75
1.5
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 5.0 V,
I D = 0.95 A
0.10
0.30
0.20
0.50
0.40
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
6.0
12
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 6.0 V,
I D = 0.5 A, R G = 50 W
4.7
25
41
8.0
35
60
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 0.6 A
T J = 25 ° C
0.82
1.20
V
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTK3043NT5G MOSFET N-CH 20V 210MA SOT-723
NTK3134NT5G MOSFET N-CH 20V 750MA SOT-723
NTK3139PT5G MOSFET P-CH 20V 660MA SOT-723
NTK3142PT1G MOSFET P-CHAN 260MA 20V SOT-723
NTLGD3502NT2G MOSFET N-CH DUAL 20V 6-DFN
NTLGF3402PT2G MOSFET P-CH 20V 2.3A 6-DFN
NTLJD2104PTBG MOSFET P-CH DUAL 12V 4.3A 6WDFN
NTLJD2105LTBG MOSFET LOAD SW 8V 4.3A 6-WDFN
相关代理商/技术参数
NTK 功能描述:烙铁 Weller Chisel Tip For WMP Solder Penc RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included
NTK 制造商:Cooper Hand Tools / Weller 功能描述:CHISEL TIP LONG 1.2MM 制造商:WELLER 功能描述:CHISEL TIP, LONG, 1.2MM 制造商:Cooper Hand Tools / Weller 功能描述:CHISEL TIP, LONG, 1.2MM; Tip / Nozzle Width:1.2mm; Tip / Nozzle Style:Chisel; For Use With:WMP Soldering Iron; Length:8.4mm; Operating Temperature Max:450C; Tip / Nozzle Size:1.2mm; Tip Length:8.4mm; Tip Size:1.2mm; Width ;RoHS Compliant: NA
NTK15T50.000/0579 制造商:PEPPERL+FUCHS 功能描述:Capacitive level sensor w/delay,3-15mm
NTK3043N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
NTK3043NAT5G 功能描述:MOSFET NFET 20V 285mA TR SOT723 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3043NT1G 功能描述:MOSFET NFET 20V 285mA TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3043NT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NTK3043NT5G 功能描述:MOSFET NFET 20V 285MA 3.4 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube